Epitaxial mid-IR nanophotonic optoelectronics

There are a range of fundamental challenges associated with scaling optoelectronic devices down to the nano-scale, and past decades have seen significant research dedicated development sub-diffraction-limit optical devices, often relying on plasmonic response metal structures. At longer wavelengths mid-infrared, dramatic changes in traditional nanophotonic materials, reduced efficiency active regions, host deleterious and/or parasitic effects makes nano-scale optoelectronics at micro-scale particularly challenging. In this Perspective, we describe recent work leveraging class infrared highly doped semiconductors, which not only support modes long wavelengths, but can also be integrated into device architectures. We discuss how wavelength-dependent these materials serve number different photonic designs, including dielectric waveguides, epsilon-near-zero dynamic cavity-based optoelectronics, present results demonstrating that semiconductor offers opportunity for monolithic, all-epitaxial, architectures out-performing current state art commercial perspectives promise optoelectronics.